Semiconductor Engineering

Short-Circuit Ruggedness In SiC MOSFETs

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
Business Wire

Transphorm’s GaN First to Hit Short Circuit Robustness Milestone Key to Motor Drive Applications

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...
EDN

The overcurrent limiting transistor fails before anything else!

In the late 1990s I was working for a company that manufactures sub-systems for tramways, subways and light rail car manufacturers. One day my boss tells me that one of our inverters, a 5 kW DC to ...
EDN

Analysis of Failure Models on Short-Circuit Events for SiC Devices

SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...
Electronic Design

Add Short-Circuit Protection, Diagnostics To Automotive High-Side/Low-Side Driver

Automotive applications need “smarter” drivers for their switches, which handle loads ranging from a fraction of an ampere to several amperes. Not only are these smart chips costly, but many times, ...
Nature

CMOS-based carbon nanotube pass-transistor logic integrated circuits

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...